| 摘要 |
PURPOSE: A multi-stages activation method of a P-type semiconductor layer is provided to increase the electrical conductivity of a P-type semiconductor. CONSTITUTION: A heat treatment process is performed for a nitride semiconductor layer on which a P-type impurity is doped(S112). A plasma surface treatment process is performed for the nitride semiconductor layer(S114). A chemical solution treatment process is performed for the nitride semiconductor layer(S116). A post heat treatment process is performed about the nitride semiconductor layer(S118). [Reference numerals] (AA) Start; (BB) End; (S110) Manufacturing Mg-doped p-GaN piece; (S112) Heat treating step(first step); (S114) Plasma treatment step(second step); (S116) Chemical solution treatment step(third step); (S118) Post treatment step(fourth step) |
