| 摘要 |
<p>The invention provides a method of treating a multilayer structure (211), comprising a wafer (208) bonded to a substrate (210), the wafer comprising at least one upper layer (202), a lower layer (201) and a buried oxide layer (204) disposed between the upper layer and the lower layer, a bonding oxide layer (206a) also being disposed between the wafer and the substrate, the method comprising a subsequent step of chemical etching of the wafer and, before said subsequent chemical etching step, the following steps in succession; ° partial mechanical trimming of the upper layer; ° a first preliminary chemical etch; ° a first partial deoxidation using a chemical etch with hydrofluoric acid; and ° a second preliminary chemical etch; and a second partial deoxidation using a chemical etch with hydrofluoric acid.</p> |
