| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve luminous efficiency by optimizing an Al composition ratio of a barrier layer of a light-emitting layer depending on a light-emitting wavelength. <P>SOLUTION: On forming a light-emitting layer of an MQW structure in which a well layer of InGaN and a barrier layer of AlGaN are sequentially and repeatedly formed, the well layer 130 and the barrier layer 131 are formed so as to satisfy the following expressions when an Al composition ratio of the barrier layer 131 is x (%), and a difference between bandgap energy of the barrier layer 131 and bandgap energy of the well layer 130 is y (eV): 12.9≤-2.8x+100y≤37 and 0.65≤y≤0.86. Alternatively, the well layer 130 and the barrier layer 131 are formed so as to satisfy the following expressions when the Al composition ratio of the barrier layer 131 is x (%) and an In composition ratio of the well layer 130 is z (%): 162.9≤7.1x+10z≤216.1 and 3.1≤z≤9.2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
