发明名称 PROCESS FOR MANUFACTURING SEMICONDUCTOR STRUCTURE USING TEMPORARY BONDING
摘要 <P>PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor structure. <P>SOLUTION: A process for manufacturing the semiconductor structure includes the following steps of: a step (E1) of providing handling substrates (1 and 2) including a seed substrate (1) and a sacrifice layer (2) which covers the seed substrate (1) and is weakened; a step (E2) of joining the handling substrates (1 and 2) and a carrier substrate (3) to each other; a step (E3) of optionally processing the carrier substrate (3); a step (E4) of separating the handling substrates in the sacrifice layer (2), and forming a semiconductor structure; and a step (E5) of removing a residue of the sacrifice layer (2) existing on the seed substrate (1) when the residue exists. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013008968(A) 申请公布日期 2013.01.10
申请号 JP20120138156 申请日期 2012.06.19
申请人 SOYTEC 发明人 FABRICE LETERTRE;LANDRU DIDIER
分类号 H01L21/02;H01L21/265;H01L27/12 主分类号 H01L21/02
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