| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for cleaning away a deposit having deposited on a film deposition apparatus for forming a thin film on a semiconductor substrate. <P>SOLUTION: The method for cleaning away a deposit having deposited on a film deposition apparatus comprises: supplying a hydrogen-based cleaning gas containing hydrogen or a hydrogen-argon mixed gas into a deposition chamber with a substrate stage temperature kept at a temperature when the chamber is unheated to a temperature of 400°C, and more preferably at 200 to 400°C; and using pulsed plasma, which is generated by a pulse power supply unit applying an electric power to an electrode placed in the deposition chamber, to act on a wall face part inside the deposition chamber. <P>COPYRIGHT: (C)2013,JPO&INPIT |
