| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of a silicon insulating film which allows for enhancement of productivity by increasing the thin film growth rate without raising the deposition temperature, when forming the silicon insulating film by thermal CVD or ALD. <P>SOLUTION: In the method of forming a silicon insulating film by using an amino silane compound as a silicon source, the amino silane compound has a Tris amino structure where all Si-NR<SB POS="POST">1</SB>R<SB POS="POST">2</SB>(R<SB POS="POST">1</SB>and R<SB POS="POST">2</SB>are hydrogen(H) or a linear or branch alkyl radical of 1-4C) bonds have a normalization dipole moment of 1.37 or higher for the H<SB POS="POST">3</SB>Si-NR<SB POS="POST">1</SB>R<SB POS="POST">2</SB>structure and having three amino groups in a molecule, or a tetrakis amino structure having four amino groups in a molecule. <P>COPYRIGHT: (C)2013,JPO&INPIT |
