| 发明名称 |
METHODS FOR DEPOSITING THIN FILMS COMPRISING GALLIUM NITRIDE BY ATOMIC LAYER DEPOSITION |
| 摘要 |
Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
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| 申请公布号 |
US2013012003(A1) |
申请公布日期 |
2013.01.10 |
| 申请号 |
US201213538809 |
申请日期 |
2012.06.29 |
| 申请人 |
HAUKKA SUVI;PORE VILJAMI J.;NISKANEN ANTTI |
发明人 |
HAUKKA SUVI;PORE VILJAMI J.;NISKANEN ANTTI |
| 分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
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