摘要 |
<p>This group III nitride composite substrate (1) contains a supporting substrate (10), an oxide film (20) formed on the supporting substrate (10), and a group III nitride layer (30a) formed on the oxide film (20). Here, the oxide film (20) can be any film selected from the group consisting of a TiO2 film and an SrTiO3 film, and can be added with impurities. As a result, a group III nitride composite substrate wherein the bond strength between the supporting substrate and the group III nitride layer is high is provided.</p> |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SATOH, ISSEI;YOSHIDA, HIROAKI;YAMAMOTO, YOSHIYUKI;HACHIGO, AKIHIRO;MATSUBARA, HIDEKI |
发明人 |
SATOH, ISSEI;YOSHIDA, HIROAKI;YAMAMOTO, YOSHIYUKI;HACHIGO, AKIHIRO;MATSUBARA, HIDEKI |