发明名称 GROUP III NITRIDE COMPOSITE SUBSTRATE
摘要 <p>This group III nitride composite substrate (1) contains a supporting substrate (10), an oxide film (20) formed on the supporting substrate (10), and a group III nitride layer (30a) formed on the oxide film (20). Here, the oxide film (20) can be any film selected from the group consisting of a TiO2 film and an SrTiO3 film, and can be added with impurities. As a result, a group III nitride composite substrate wherein the bond strength between the supporting substrate and the group III nitride layer is high is provided.</p>
申请公布号 WO2012063774(A9) 申请公布日期 2013.01.10
申请号 WO2011JP75591 申请日期 2011.11.07
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;SATOH, ISSEI;YOSHIDA, HIROAKI;YAMAMOTO, YOSHIYUKI;HACHIGO, AKIHIRO;MATSUBARA, HIDEKI 发明人 SATOH, ISSEI;YOSHIDA, HIROAKI;YAMAMOTO, YOSHIYUKI;HACHIGO, AKIHIRO;MATSUBARA, HIDEKI
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
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