发明名称 MEMORY DEVICE AND SIGNAL PROCESSING CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory device whose stored logic state is not erased even after the stop of power supply, and provide a signal processing circuit that can suppress power consumption by the stop of power supply due to the use of the memory device. <P>SOLUTION: A memory device includes a logic circuit having first and second nodes, a first memory circuit connected to the first node, a second memory circuit connected to the second node, and a precharge circuit connected to the first node, the second node, the first memory circuit, and the second memory circuit. At readout, the precharge circuit outputs a precharge potential to the first node and the second node. Each of the first and second memory circuits includes a transistor whose channel is formed in an oxide semiconductor film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013008437(A) 申请公布日期 2013.01.10
申请号 JP20120112344 申请日期 2012.05.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ISHIZU TAKAHIKO
分类号 G11C11/412;G11C11/41;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L27/08;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/108;H01L27/11 主分类号 G11C11/412
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