| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving driving force properties and interruption properties of a FET. <P>SOLUTION: There is provided a semiconductor device comprising a semiconductor substrate, and a semiconductor element formed on the semiconductor substrate and formed of a FET capable of varying a threshold voltage between an OFF state and an ON state. The semiconductor element comprises: an insulating film formed above a portion of the semiconductor substrate on which a channel is formed; a gate electrode provided above the insulating film; and a charge-trapping film interposed between the insulating film and the gate electrode and transmits and receives a greater number of electrons to and from the gate electrode than to and from the channel. <P>COPYRIGHT: (C)2013,JPO&INPIT |
