A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.
申请公布号
US2013009249(A1)
申请公布日期
2013.01.10
申请号
US201213613534
申请日期
2012.09.13
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;BASKER VEERARAGHAVAN S.;HORAK DAVID V.;JAGANNATHAN HEMANTH;KOBURGER, III CHARLES W.
发明人
BASKER VEERARAGHAVAN S.;HORAK DAVID V.;JAGANNATHAN HEMANTH;KOBURGER, III CHARLES W.