发明名称 FINFET DEVICES AND METHODS OF MANUFACTURE
摘要 A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.
申请公布号 US2013009249(A1) 申请公布日期 2013.01.10
申请号 US201213613534 申请日期 2012.09.13
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;BASKER VEERARAGHAVAN S.;HORAK DAVID V.;JAGANNATHAN HEMANTH;KOBURGER, III CHARLES W. 发明人 BASKER VEERARAGHAVAN S.;HORAK DAVID V.;JAGANNATHAN HEMANTH;KOBURGER, III CHARLES W.
分类号 H01L27/088 主分类号 H01L27/088
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