| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide Ge-rich GST-212 phase change materials to realize higher crystallization temperature, lower reset current requirement and better retention than conventional GST-225 phase change memory. <P>SOLUTION: The Ge atomic concentration x is within a range from 30% to 65%, the Sb atomic concentration y is within a range from 13% to 27% and the Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device comprising such materials suitable for integrated circuits is described. <P>COPYRIGHT: (C)2013,JPO&INPIT |
