发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of operating at high speed and reducing power consumption. <P>SOLUTION: A semiconductor device includes a latch circuit comprising: a level shifter: a first buffer and a second buffer; a first switch and a second switch; and a first terminal, a second terminal receiving the input of an inversion signal of a signal input from the first terminal, and a third terminal receiving the input of a clock signal that controls the states of the first switch and the second switch. A first output terminal of the level shifter is connected to one input terminals of the first buffer and the second buffer via the first switch. A second output terminal of the level shifter is connected to other input terminals of the first buffer and the second buffer via the second switch. A first input terminal of the level shifter is connected to an output terminal of the first buffer, and a second input terminal of the level shifter is connected to an output terminal of the second buffer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013009310(A) 申请公布日期 2013.01.10
申请号 JP20120106133 申请日期 2012.05.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NISHIJIMA TATSUJI
分类号 H03K3/037;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/786;H03K19/0185;H03K19/0948 主分类号 H03K3/037
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