| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving method for a semiconductor device. <P>SOLUTION: A semiconductor device comprises a nonvolatile memory cell including: a writing transistor formed using an oxide semiconductor; a readout transistor formed using a semiconductor material different from the writing transistor; and a capacitor. Writing in the memory cell is performed in a manner that after a potential is supplied to a node at which a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the readout transistor are electrically connected to each other by turning on the writing transistor, the writing transistor is turned off to cause the node to hold a predetermined amount of potentials. Readout of the memory cell is performed according to whether, after stop of supply of the precharge potential to a bit line, the potential of the bit line is kept at the precharge potential or decreases. <P>COPYRIGHT: (C)2013,JPO&INPIT |
