| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that allows enhancing the quality of a light-emitting layer and improving the luminous efficiency. <P>SOLUTION: A GaN buffer layer 2, an n-type GaN layer 3, an InGaN/GaN intermediate buffer layer 4, an MQW active layer 5, a p-type AlGaN layer 6, and a p-type GaN layer 7 are stacked on a sapphire substrate 1 in this order. The InGaN/GaN intermediate buffer layer 4 has a superlattice structure in which a plurality of InGaN films and a plurality of GaN films are alternately stacked. The In composition ratio of the InGaN films gradually increases from the n-type GaN layer 3 toward the MQW active layer 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
