发明名称 GATE DRIVE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of suppressing a power loss during regenerative operation of a switching element comprising a wideband gap semiconductor, and of stably turning on and off the switching element. <P>SOLUTION: A series circuit connected between a control circuit and a gate of a switching element Q2 and comprising a capacitor C1, a resistance R1, and a diode D1 is provided. A PNP-type transistor Q1 is connected between the gate and a source of the switching element via a resistance R2. A diode D2 is connected between a collector and a base of the transistor Q1. The base of the transistor Q1 is connected to an anode of the diode D1. When an off signal from the control circuit is inputted, the gate and the source are short-circuited while remaining a difference voltage between a junction voltage of the transistor and a forward voltage of the diode D2. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013009216(A) 申请公布日期 2013.01.10
申请号 JP20110141413 申请日期 2011.06.27
申请人 SANKEN ELECTRIC CO LTD 发明人 NAKANISHI RYOTA
分类号 H03K17/687;H02M1/08 主分类号 H03K17/687
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