| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and device of a semiconductor memory capable of improving a manufacturing yield by changing a processing recipe automatically. <P>SOLUTION: A manufacturing method of a semiconductor memory comprises: a step (S3) in which a calculation unit receives measurement values including a second oxide film thickness, a first oxide film thickness, a gate electrode width, and an active region width, and calculates a predictive current value of a semiconductor memory cell unit; and steps (S4, S5, and S6) in which when the predictive current value is determined to be less than or equal to a reference current value (S4), a process treatment execution unit selects a first processing recipe and forms a SW covering a side wall of a floating gate electrode according to the selected first processing recipe (S5), and when the predictive current value is determined to be greater than the reference current value (S4), the process treatment execution unit selects a second processing recipe and forms a SW covering a side wall of a floating gate electrode according to the selected second processing recipe (S6). A second SW film thickness which is a first direction film thickness of the SW formed according to the second processing recipe is greater than a first SW film thickness which is a first direction film thickness of the SW formed according to the first processing recipe. <P>COPYRIGHT: (C)2013,JPO&INPIT |
