发明名称 |
DISTRIBUTING POWER WITH THROUGH-SILICON-VIAS |
摘要 |
An integrated circuit with distributed power using through-silicon-vias (TSVs) is presented. The integrated circuit has conducting pads for providing power and ground located within the peripheral region of the top surface. A number of through-silicon-vias are distributed within the peripheral region and a set of TSVs are formed within the non-peripheral region of the integrated circuit. Conducting lines on the bottom surface are coupled between each peripheral through-silicon-via and a corresponding non-peripheral through-silicon-via. Power is distributed from the conducting pads to the TSVs within the non-peripheral region through the TSVs within the peripheral region, thus supplying power and ground to circuits located within the non-peripheral region of the integrated circuit chip.
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申请公布号 |
US2013011965(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213618103 |
申请日期 |
2012.09.14 |
申请人 |
WHITE THOMAS HENRY;POWELL GILES V.;PATEL RAKESH H. |
发明人 |
WHITE THOMAS HENRY;POWELL GILES V.;PATEL RAKESH H. |
分类号 |
H01L21/98 |
主分类号 |
H01L21/98 |
代理机构 |
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