发明名称 SEMICONDUCTOR ELEMENT-EMBEDDED SUBSTRATE, AND METHOD OF MANUFACTURING THE SUBSTRATE
摘要 A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line; and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.
申请公布号 US2013009325(A1) 申请公布日期 2013.01.10
申请号 US201113635621 申请日期 2011.01.25
申请人 NEC CORPORATION;MORI KENTARO;YAMAMICHI SHINTARO;MURAI HIDEYA;KIKUCHI KATSUMI;NAKASHIMA YOSHIKI;OHSHIMA DAISUKE 发明人 MORI KENTARO;YAMAMICHI SHINTARO;MURAI HIDEYA;KIKUCHI KATSUMI;NAKASHIMA YOSHIKI;OHSHIMA DAISUKE
分类号 H01L23/48;H01L21/56;H01L21/768 主分类号 H01L23/48
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