发明名称 |
POLISHING SLURRY AND POLISHING METHOD THEREFOR |
摘要 |
The present invention provides a polishing technique which enables polishing of silicon carbide, which is difficult to be polished, with high efficiency and high surface accuracy. The present invention relates to a polishing slurry for polishing a substrate, which comprises abrasive particles containing manganese oxide as a main component and in which the content of the abrasive particles is less than 10% by weight based on the polishing slurry. The polishing slurry of the present invention has a pH of preferably 7 or more. It is particularly preferable to use manganese dioxide as abrasive particles. The polishing slurry of the present invention is suitable for a substrate of silicon carbide.
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申请公布号 |
US2013012102(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201013634939 |
申请日期 |
2010.11.22 |
申请人 |
YAMAGUCHI YASUHIDE;HORIUCHI MIKIMASA |
发明人 |
YAMAGUCHI YASUHIDE;HORIUCHI MIKIMASA |
分类号 |
C09K3/14;B24B37/00;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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