发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.
申请公布号 US2013012019(A1) 申请公布日期 2013.01.10
申请号 US201213618947 申请日期 2012.09.14
申请人 FUJITSU SEMICONDUCTOR LIMITED;SAKAMOTO MANABU;SHIRASU TETSUYA;IDANI NAOKI 发明人 SAKAMOTO MANABU;SHIRASU TETSUYA;IDANI NAOKI
分类号 H01L21/768;B24B37/00;B24B53/017;H01L21/304 主分类号 H01L21/768
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