| 摘要 |
A method for purifying silicon includes placing silicon to be purified and an aluminum-silicon alloy ingot, made from high purity aluminum in close contact in a closed environment to be subjected to heating under vacuum, such that the aluminum-silicon alloy ingot is melted into an aluminum-silicon melt. The temperatures are kept constant when the temperature M the interface of the silicon and the aluminum-silicon melt and the temperature at a free end of the aluminum-silicon melt reach 900° C. and 800° C. respectively. As the purified silicon begins to segregate and the interface, the heating apparatus is moved in step with the growth rate of the segregated silicon toward the silicon to be purified to maintain the temperatures at both ends of the aluminum-silicon melt. The segregated pure silicon is cut off upon the completion of dissolution of purified silicon and after cooling and air pressure recovery.
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