| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an off-set transistor and a non-off-set transistor including an oxide semiconductor on the same substrate. <P>SOLUTION: An oxide semiconductor layer 202, a gate insulator 203, and first layer wires 204a and 204b serving as gate wires are formed. Then, an off-set transistor is covered with resist 206 and impurities are introduced to the oxide semiconductor layer, thereby forming an N-type oxide semiconductor region 207. After that, a second layer wire 209a, a second layer wire 209b, and a second layer wire 209c are formed. Through these steps, the off-set transistor and a non-off-set transistor (aligned transistor or the like) can be formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
