| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resonator capable of being simply formed on a semiconductor integrated circuit. <P>SOLUTION: A resonator comprises: a semiconductor substrate; a first acoustic wave propagation layer: and first acoustic wave reflection layers. The first acoustic wave propagation layer is formed on the semiconductor substrate in a shape that has long sides in a first direction and short sides in a second direction different from the first direction, respectively. The first acoustic wave reflection layers are formed at least at both ends of the first acoustic wave propagation layer in the first direction. Widths of the first acoustic wave reflection layers in the first direction are formed such that a reflection coefficient of sound intensity of an acoustic wave or a transmission coefficient of the sound intensity thereof in interfaces among the first acoustic wave propagation layer and the first acoustic wave reflection layers becomes not less than a predetermined value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
