发明名称 TARGET FOR SPUTTERING, AND METHOD FOR SPUTTERING USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a target which can discharge in a stable manner for a long period and enable good deposition, even when a metal oxide film is formed by reactive sputtering. <P>SOLUTION: The target 3<SB POS="POST">1</SB>for sputtering is arranged together with a substrate to be processed in a sputtering chamber, and is subjected to sputtering while gas containing at least oxygen is introduced during sputtering. An insulation plate 8 is affixed in a region where oxide of elements constituting the target can adhere and deposit, in a sputtering surface 3a of the target. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013007109(A) 申请公布日期 2013.01.10
申请号 JP20110141728 申请日期 2011.06.27
申请人 ULVAC JAPAN LTD 发明人 TAMIYA SHINTARO;KURATA TAKAOMI;ARAI MAKOTO;KIYOTA JUNYA
分类号 C23C14/34;H01L21/31 主分类号 C23C14/34
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