METHOD FOR PRODUCING CRYSTAL AND CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a new method for producing crystal for performing a homoepitaxial growth by a sublimation method in which a base substrate is not fixed to a material having different coefficients of thermal expansion.

SOLUTION: The method for producing crystal includes: an arrangement step (St1) of arranging a raw material body 2 formed of a raw material of a single crystal and a single crystal seed substrate 3 on an upper surface 2a of the raw material body 2 so as to come into contact with the raw material body 2 in a crystal growth container 1; and a crystal growth step (St2) of growing a crystal 4 by depositing a raw material gas on an upper surface 3a of the single crystal seed substrate 3, the raw material gas is made by raising the temperature in the crystal growth container 1 to sublimate a part of a raw material of the raw material body 2. The single crystal seed substrate 3 and the crystal 4 are formed of a material having the same chemical composition.

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