发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE |
摘要 |
A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered
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申请公布号 |
US2013012004(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213541885 |
申请日期 |
2012.07.05 |
申请人 |
DENSO CORPORATION;OHTSUKI HIROSHI;SHIBATA TAKUMI |
发明人 |
OHTSUKI HIROSHI;SHIBATA TAKUMI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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