发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.
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申请公布号 |
US2013010541(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213618537 |
申请日期 |
2012.09.14 |
申请人 |
FUTATSUYAMA TAKUYA;EDAHIRO TOSHIAKI;FUJITA NORIHIRO;ARAI FUMITAKA;MARUYAMA TOHRU;KONDO MASAKI |
发明人 |
FUTATSUYAMA TAKUYA;EDAHIRO TOSHIAKI;FUJITA NORIHIRO;ARAI FUMITAKA;MARUYAMA TOHRU;KONDO MASAKI |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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