发明名称 |
Doped Graphene Films with Reduced Sheet Resistance |
摘要 |
Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
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申请公布号 |
US2013011960(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213616418 |
申请日期 |
2012.09.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;AFZALI-ARDAKANI ALI;BOL AGEETH ANKE;TULEVSKI GEORGE STOJAN |
发明人 |
AFZALI-ARDAKANI ALI;BOL AGEETH ANKE;TULEVSKI GEORGE STOJAN |
分类号 |
H01L31/18;B05D5/12 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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