发明名称 Doped Graphene Films with Reduced Sheet Resistance
摘要 Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
申请公布号 US2013011960(A1) 申请公布日期 2013.01.10
申请号 US201213616418 申请日期 2012.09.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;AFZALI-ARDAKANI ALI;BOL AGEETH ANKE;TULEVSKI GEORGE STOJAN 发明人 AFZALI-ARDAKANI ALI;BOL AGEETH ANKE;TULEVSKI GEORGE STOJAN
分类号 H01L31/18;B05D5/12 主分类号 H01L31/18
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