| 摘要 |
A semiconductor device that includes a substrate 37, a non-volatile memory (memory cell) 21 having a memory cell transistor (switching element) 33 and a floating gate electrode (memory storage part) 36, and a passivation insulating film (insulating layer) 40 and an organic polymer film (insulating layer) 41 both provided above the non-volatile memory 21, in which conductive wiring line layers (shielding part) 5a to 5c for shielding the floating gate electrode 36 are provided between the floating gate electrode 36 and both the passivation insulating film 40 and the organic polymer film 41 so that ions generated from the passivation insulating film 40 and the organic polymer film 41 can be prevented from reaching the floating gate electrode 36. |
