发明名称 METHOD FOR MANUFACTURING POROUS SILICON
摘要 <P>PROBLEM TO BE SOLVED: To provide an easy, inexpensive, and clean method for manufacturing porous silicon with a large surface area, especially suitable for a negative electrode material of lithium batteries. <P>SOLUTION: The method is to execute the following steps in the order of: (1) exposing particular or film-shaped silicon to an atmosphere having a relative humidity of 75% or more at a temperature of 40&deg;C or more for 20 hours or more to form an oxide film at least on the surface of the silicon; and (2) removing the oxide film by a hydrofluoric acid. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013008487(A) 申请公布日期 2013.01.10
申请号 JP20110139150 申请日期 2011.06.23
申请人 TOKUYAMA CORP 发明人 ODA HIROYUKI
分类号 H01M4/38;H01L21/306 主分类号 H01M4/38
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