| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which inter-bump shorting which occurs at heating at the time of connection or under a load or a rupture at a connection part under a large distortion is prevented otherwise a contact resistance is reduced, to be adaptive to a high speed transfer with high reliability, relating to a structure in which a semiconductor element having a micro pitch electrode of 50 micron pitch or less is connected to a pad or wiring of a substrate. <P>SOLUTION: A substrate 20 and a semiconductor element 1 are connected together through a bump 11 of which a vertical elastic coefficient (young's modulus) is 65-600 GPa and a buffer layer 12 whose main component is one of tin, aluminum, indium, and lead. A protrusion is formed on at least one of the facing surfaces of a wiring 21 or a pad on the substrate 20 and the bump 11, allowing low temperature connection by performing connection using ultrasonic sound. <P>COPYRIGHT: (C)2013,JPO&INPIT |
