| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor element in which the leakage current of base current and collector current is low although a non-alloy layer using Te as n-type impurities is included. <P>SOLUTION: In a transistor element 10 comprising a substrate 11, a high mobility transistor structure layer 28 provided on the substrate 11, and a hetero-bipolar transistor structure layer 29 provided on the high mobility transistor structure layer 28, a non-alloy layers 26, 27 of the hetero-bipolar transistor structure layer 29 are doped with Te as n-type impurities, and the concentration of n-type impurities is set in a range of 1.0×10<SP POS="POST">19</SP>cm<SP POS="POST">-3</SP>-2.0×10<SP POS="POST">19</SP>cm<SP POS="POST">-3</SP>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
