METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing whiskers that occur in a W film.

SOLUTION: There is provided a method of manufacturing a semiconductor device comprising: a step S108 of forming a silicon film on a semiconductor substrate; a step S109 of forming a tungsten film on the silicon film; a step S110 of forming an opening that penetrates through the tungsten film and the silicon film such that the tungsten film and the silicon film exist in a gate region; a step S114 of performing a nitriding process after the opening is formed, such that a greater amount of the tungsten film is nitrided than the silicon film; and a step S118 of forming a silicon oxide film at least on the tungsten film after the nitriding process.

COPYRIGHT: (C)2013,JPO&INPIT