| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a silicon carbide substrate capable of minimizing occurrence of chipping when a chamfered part is formed. <P>SOLUTION: The production method of a silicon carbide substrate includes a step for preparing an ingot of single crystal silicon carbide, a step for obtaining a silicon carbide substrate 3 by cutting the ingot, and a step for forming a chamfered part in a region including the outer peripheral surface of the silicon carbide substrate 3. In the step for obtaining a silicon carbide substrate 3, the ingot is cut so that the principal surface 3A of the silicon carbide substrate 3 forms an angle of 10° or more with respect to the ä0001} plane. <P>COPYRIGHT: (C)2013,JPO&INPIT |
