| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can eliminate a difference in noise margin between mats during a sense operation. <P>SOLUTION: A semiconductor storage device comprises: a plurality of mats that include memory cells; a sense amplifier circuit that is provided between two adjacent mats among the plurality of mats and is connected with a bit line which is provided for each of the two adjacent mats; dummy bit lines that are provided for mats arranged at both ends among the plurality of mats; and a control circuit that controls a potential to be applied to the dummy bit lines according to a potential to be applied to bit lines provided for the mats arranged at the ends. <P>COPYRIGHT: (C)2013,JPO&INPIT |
