发明名称 |
NH3 CONTAINING PLASMA NITRIDATION OF A LAYER ON A SUBSTRATE |
摘要 |
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
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申请公布号 |
US2013012032(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213541941 |
申请日期 |
2012.07.05 |
申请人 |
APPLIED MATERIALS, INC.;LIU WEI;BEVAN MALCOLM J.;OLSEN CHRISTOPHER S.;SWENBERG JOHANES |
发明人 |
LIU WEI;BEVAN MALCOLM J.;OLSEN CHRISTOPHER S.;SWENBERG JOHANES |
分类号 |
H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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