发明名称 METHOD FOR FORMING CONTACT HOLE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A post is formed on a substrate. After applying an insulating film material over the substrate so as to form a film on the substrate such that the upper end of the post is exposed, the insulating film material is cured, thereby forming an insulating film on the substrate. A contact hole is formed in the insulating film by removing the post. The post has a curved portion or bent portion that protrudes in a direction that is opposite to the flowing direction of the insulating film material that is applied and formed into a film.</p>
申请公布号 WO2013005279(A1) 申请公布日期 2013.01.10
申请号 WO2011JP65188 申请日期 2011.07.01
申请人 PIONEER CORPORATION;HATA, TAKUYA 发明人 HATA, TAKUYA
分类号 H01L21/768;H01L21/28;H01L29/786;H01L51/05;H01L51/50;H05B33/02 主分类号 H01L21/768
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