发明名称 |
METHOD FOR FORMING CONTACT HOLE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A post is formed on a substrate. After applying an insulating film material over the substrate so as to form a film on the substrate such that the upper end of the post is exposed, the insulating film material is cured, thereby forming an insulating film on the substrate. A contact hole is formed in the insulating film by removing the post. The post has a curved portion or bent portion that protrudes in a direction that is opposite to the flowing direction of the insulating film material that is applied and formed into a film.</p> |
申请公布号 |
WO2013005279(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
WO2011JP65188 |
申请日期 |
2011.07.01 |
申请人 |
PIONEER CORPORATION;HATA, TAKUYA |
发明人 |
HATA, TAKUYA |
分类号 |
H01L21/768;H01L21/28;H01L29/786;H01L51/05;H01L51/50;H05B33/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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