发明名称 |
NONVOLATILE MEMORY DEVICE PROVIDING NEGATIVE VOLTAGE |
摘要 |
Disclosed is a nonvolatile memory device which includes memory blocks, a pre-decoder, and a row decoder. Each of the memory blocks has a plurality of memory cells. The pre-decoder includes a multiplexer and negative level shifters. The multiplexer is configured to generate multiplexing signals in response to address signals. Each of the negative level shifters is configured to generate a converted multiplexing signal corresponding to a respective multiplexing signal by converting a multiplexing signal having a ground voltage into a converted multiplexing signal having a first negative voltage. The row decoder is configured to select at least one of the memory blocks in response to the converted multiplexing signals. |
申请公布号 |
US2013010539(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213463063 |
申请日期 |
2012.05.03 |
申请人 |
SHIM SANG-WON;KWAK PAN-SUK;PARK KI-TAE;CHOI YOON-HEE |
发明人 |
SHIM SANG-WON;KWAK PAN-SUK;PARK KI-TAE;CHOI YOON-HEE |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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