| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment technique ensuring high throughput while requiring a small occupied area of a heat treatment apparatus, in a heat treatment technology performing heat treatment of a treated substrate and then cooling the substrate. <P>SOLUTION: Heat treatment of a wafer W is performed by irradiating the wafer W with infrared light, that is the absorption wavelength light thereof, from an LED module 3. Since the wafer W is heated by radiation, it can be heated quickly. Furthermore, since an LED 35 is used as a heat source and temperature rise of the LED 35 is small, cooling after heat treatment can be carried out in the same processing region as that of heat treatment. Consequently, installation area of the heat treatment apparatus can be minimized. Since the transit time between the heat treatment region and the cooling region can be saved, a series of processing time for the heat treatment and subsequent cooling can be shortened resulting in the enhancement of throughput. <P>COPYRIGHT: (C)2013,JPO&INPIT |
