| 摘要 |
FIELD: electricity.SUBSTANCE: in design of a crystal of an arsenide-gallium diode in epitaxial anode and cathode areas of a structure the profile of concentration of an alloying admixture is distinct stepped with sharp-smooth-sharp decrease and increase of differential concentration of donor and acceptor admixtures. The crystal of the ultrafast powerful high-voltage arsenide-gallium diode comprises a highly alloyed single-crystal substrate of the first type of conductivity with concentration of the alloying admixture of at least 10cm; the epitaxial layer of the first type of conductivity with areas of sharp, smooth, sharp reduction of differential concentration of donor and acceptor admixtures from the level of concentration in a substrate of 10cmto less than 10cm; the epitaxial layer with differential concentration of donor and acceptor admixtures of 10cm; the epitaxial layer of the second type of conductivity with areas with sharp, smooth, sharp increase of differential concentration of donor and acceptor admixtures from 10cmto 10cmand higher.EFFECT: improved dynamic properties, expanded range of working voltages, increased density of currents, higher thermodynamic resistance of high-voltage ultrafast arsenide-gallium diodes.2 cl, 1 dwg |
