发明名称 |
HAFNIUM TANTALUM OXIDE DIELECTRICS |
摘要 |
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.
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申请公布号 |
US2013012031(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213614059 |
申请日期 |
2012.09.13 |
申请人 |
MICRON TECHNOLOGY, INC.;AHN KIE Y.;FORBES LEONARD |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L21/3105 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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