SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a pattern on a substrate. The semiconductor devices may also include a capping dielectric layer on the pattern. The semiconductor devices may further include a first nitride layer on the capping dielectric layer. Moreover, the semiconductor devices may include a second nitride layer on the first nitride layer. A concentration of nitrogen in the first nitride layer may be greater than that in the second nitride layer.