发明名称 DIELECTRIC THIN FILM, DIELECTRIC THIN FILM ELEMENT, AND THIN FILM CAPACITOR
摘要 <p>[Problem] To provide: a dielectric thin film which is capable of reducing leakage current; a dielectric thin film element; and a thin film capacitor. [Solution] A thin film capacitor (1) is provided with a substrate (10) and a dielectric thin film element (16) that is formed on the substrate (10). The substrate (10) is formed of an Si plate (2), an SiO2 film (4) that is formed on the Si plate (2), and a Ti film (6) that is formed on the SiO2 film (4). The dielectric thin film element (16) is configured of a lower electrode (8), a dielectric thin film (12) that is formed on the lower electrode (8), and an upper electrode (14) that is formed on the dielectric thin film (12). The dielectric thin film (12) is a sheet that is configured of a nanosheet, and a pore portion of the dielectric thin film (12) is filled with a p-type conductive organic polymer. Examples of the dielectric body that is used as a main component of the nanosheet may include Ti0.87O2 and Ca2Nb3O10. A polypyrrole, a polyaniline, a polyethylene dioxythiophene and the like are suitable as the p-type conductive organic polymer.</p>
申请公布号 WO2013005468(A1) 申请公布日期 2013.01.10
申请号 WO2012JP60691 申请日期 2012.04.20
申请人 MURATA MANUFACTURING CO., LTD.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE;OKAMOTO, TAKAFUMI;OSADA, MINORU;SASAKI, TAKAYOSHI 发明人 OKAMOTO, TAKAFUMI;OSADA, MINORU;SASAKI, TAKAYOSHI
分类号 H01G4/33;H01G4/12;H01L21/822;H01L27/04 主分类号 H01G4/33
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