| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which allows stable operation of magnetoresistance effect elements by blocking magnetic interference action between the magnetoresistance effect elements and can be easily manufactured. <P>SOLUTION: The semiconductor memory device according to an embodiment of the present invention includes a plurality of magnetoresistance effect elements arranged in a matrix on a semiconductor substrate. Each of the magnetoresistance effect elements has a laminated structure composed of a first magnetic layer formed on the semiconductor substrate, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. An insulating film having a metal or a magnetic material dispersed therein is embedded between adjacent magnetoresistance effect elements. <P>COPYRIGHT: (C)2013,JPO&INPIT |
