发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME |
摘要 |
A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.
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申请公布号 |
US2013009195(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201113580941 |
申请日期 |
2011.02.04 |
申请人 |
NICHIA CORPORATION;KAWAGUCHI HIROFUMI;YONEDA AKINORI;DOI HIROSHI |
发明人 |
KAWAGUCHI HIROFUMI;YONEDA AKINORI;DOI HIROSHI |
分类号 |
H01L33/40;H01L33/32 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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