发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
摘要 A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.
申请公布号 US2013009195(A1) 申请公布日期 2013.01.10
申请号 US201113580941 申请日期 2011.02.04
申请人 NICHIA CORPORATION;KAWAGUCHI HIROFUMI;YONEDA AKINORI;DOI HIROSHI 发明人 KAWAGUCHI HIROFUMI;YONEDA AKINORI;DOI HIROSHI
分类号 H01L33/40;H01L33/32 主分类号 H01L33/40
代理机构 代理人
主权项
地址