发明名称 PHOTOVOLTAIC STRUCTURE
摘要 A photovoltaic device on a low-cost, conductive silicon layer is disclosed. The device comprises two semiconductor layers forming an active region; optional layers include "heterojunction layers", one or more barrier layers, a cap layer, a conductive and/or metallization layer, an anti-reflection layer, and distributed Bragg reflector. The device may comprise multiple active regions.
申请公布号 WO2012135540(A3) 申请公布日期 2013.01.10
申请号 WO2012US31290 申请日期 2012.03.29
申请人 INTEGRATED PHOTOVOLTAICS, INC.;ZEHAVI, SHARONE 发明人 ZEHAVI, SHARONE
分类号 H01L31/042;H01L31/072;H01L31/18 主分类号 H01L31/042
代理机构 代理人
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