| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the memory capacity of a memory module per unit area, and provide a memory module with low power consumption. <P>SOLUTION: A semiconductor device includes a bit line, two or more word lines, and a memory cell including two or more sub-memory cells each including a transistor and a capacitor. One of a source and a drain of the transistor is connected to the bit line, the other of the source and the drain of the transistor is connected to the capacitor, and a gate of the transistor is connected to one of the word lines. The capacity of the capacitor is different for each sub-memory cell. <P>COPYRIGHT: (C)2013,JPO&INPIT |
