| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable magnetoresistive element in which retention, especially a large retention of a pinned magnetization layer, can be ensured sufficiently while reducing the write current, and thermally stable operation is possible. <P>SOLUTION: In an MTJ10, a tunnel barrier layer 2 is sandwiched by a lower magnetic layer 1 and an upper magnetic layer 3, and a cap layer 4 is formed on the upper magnetic layer 3. The lower magnetic layer 1 is configured to have a first free layer 1a consisting of CoFeB and in contact with the tunnel barrier layer 2, an insertion layer 1b consisting of Ta and in contact with the first free layer 1a, a spacer layer 1c consisting of Ru and in contact with the insertion layer 1b, and a second free layer 1d consisting of CoPt and in contact with the spacer layer 1c. <P>COPYRIGHT: (C)2013,JPO&INPIT |
