| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS structure that uses a SiC semiconductor, which can reduce the interface state itself on the SiO<SB POS="POST">2</SB>/SiC interface; and an oxide film forming method for the same. <P>SOLUTION: A SiC semiconductor substrate 1 is prepared in a treatment furnace, a relatively low temperature of 700°C is set in the treatment furnace, and the surface of the SiC semiconductor substrate 1 is exposed into an oxide gas atmosphere. This thermal oxidation causes formation of an intermediate layer 2 with an ultra-thinness of approximately 1 nm, which is composed of SiO<SB POS="POST">2</SB>, on the surface of the SiC semiconductor substrate 1. A SiO<SB POS="POST">2</SB>film is deposited to a thickness of approximately 50 nm on the intermediate layer 2, to form a deposited layer 3 which is composed of SiO<SB POS="POST">2</SB>. The deposited layer 3 is annealed at such a temperature and for such a time that oxidation of the SiC semiconductor substrate 1 does not occur. This annealing is rapidly performed in a short period of time by a rapid heating device such as an infrared lamp at a temperature that is close to and lower than 1200°C, which is a melting point of the SiO<SB POS="POST">2</SB>film, for example at a temperature on the order of 1000 to 1100°C. <P>COPYRIGHT: (C)2013,JPO&INPIT |
